Hybrid photovoltaic structures based on polymer/chemically grown cadmium selenide films : effect of silicotungstic acid on the junction properties
Identifieur interne : 013052 ( Main/Repository ); précédent : 013051; suivant : 013053Hybrid photovoltaic structures based on polymer/chemically grown cadmium selenide films : effect of silicotungstic acid on the junction properties
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Abstract
Thin cadmium selenide layers were deposited by chemical bath deposition (CBD) on various substrates: glass, gold, indium tin oxide (ITO), and poly(3-methylthiophene) (PMeT), an organic conducting polymer. In all cases, CdSe adhered strongly to the substrate. X-ray diffraction, scanning electron microscopy, and optical transmission revealed an effect of the substrate nature upon the structural and optical properties of CdSe films. Because CdSe is an n-type semiconductor and PMeT either a p-type semiconductor or a quasi-metallic conductor, attention was focused on the hybrid organic-inorganic photovoltaic junctions, which result either from CdSe chemical bath deposition on PMeT or, conversely, from PMeT electropolymerization on CBD CdSe. In the former case, a p-n type junction was obtained, whereas, in the latter case, a Schottky-type junction was obtained. The nonoptimized photovoltaic energy conversion efficiency of these junctions under 56 mW cm-2 white light from a Xenon lamp were 0.03 and 1.3%, respectively. When CdSe was deposited in the presence of silicotungstic acid (STA) in the chemical bath, localized energy levels were created in the forbidden band of CdSe, which improved the optical properties of the thin films, and hence, the energy conversion efficiency, which increased up to 2.7% for the Schottky-type photovoltaic organic-inorganic PMeT/CdSe(STA) photovoltaic junction.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hybrid photovoltaic structures based on polymer/chemically grown cadmium selenide films : effect of silicotungstic acid on the junction properties</title><author><name sortKey="Sene, C" uniqKey="Sene C">C. Sene</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des Semiconducteurs et d'Energie Solaire (LASES), Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop</s1><s2>Dakar-Fann</s2><s3>SEN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Sénégal</country><wicri:noRegion>Dakar-Fann</wicri:noRegion></affiliation></author><author><name sortKey="Cong, H Nguyen" uniqKey="Cong H">H. Nguyen Cong</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Laboratoire d'Electrochimie et de Chimie Physique du Corps Solide, UMR ULP/CNRS 7512, Faculté de chimie, Université Louis Pasteur, 1-4 rue Biaise Pascal</s1><s2>67000 Strasbourg</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Alsace</region><settlement type="city">Strasbourg</settlement></placeName><orgName type="university">Université Strasbourg 1</orgName></affiliation></author><author><name sortKey="Dieng, M" uniqKey="Dieng M">M. Dieng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des Semiconducteurs et d'Energie Solaire (LASES), Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop</s1><s2>Dakar-Fann</s2><s3>SEN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Sénégal</country><wicri:noRegion>Dakar-Fann</wicri:noRegion></affiliation></author><author><name sortKey="Chartier, P" uniqKey="Chartier P">P. Chartier</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Laboratoire d'Electrochimie et de Chimie Physique du Corps Solide, UMR ULP/CNRS 7512, Faculté de chimie, Université Louis Pasteur, 1-4 rue Biaise Pascal</s1><s2>67000 Strasbourg</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Alsace</region><settlement type="city">Strasbourg</settlement></placeName><orgName type="university">Université Strasbourg 1</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0081500</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 01-0081500 INIST</idno><idno type="RBID">Pascal:01-0081500</idno><idno type="wicri:Area/Main/Corpus">011C03</idno><idno type="wicri:Area/Main/Repository">013052</idno></publicationStmt><seriesStmt><idno type="ISSN">0025-5408</idno><title level="j" type="abbreviated">Mater. res. bull.</title><title level="j" type="main">Materials research bulletin</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectrum</term><term>Cadmium selenides</term><term>Conducting polymers</term><term>Crystal growth from solutions</term><term>Heterojunction</term><term>Manufacturing</term><term>Operating mode</term><term>Photovoltaic cell</term><term>Solar cell</term><term>Substrate</term><term>Thiophene derivative polymer</term><term>Voltage current curve</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dispositif photovoltaïque</term><term>Hétérojonction</term><term>Fabrication</term><term>Croissance cristalline en solution</term><term>Mode opératoire</term><term>Diffraction RX</term><term>Substrat</term><term>Spectre absorption</term><term>Caractéristique courant tension</term><term>Cellule solaire</term><term>Polymère conducteur</term><term>Cadmium séléniure</term><term>Thiophène dérivé polymère</term><term>CdSe</term><term>Cd Se</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin cadmium selenide layers were deposited by chemical bath deposition (CBD) on various substrates: glass, gold, indium tin oxide (ITO), and poly(3-methylthiophene) (PMeT), an organic conducting polymer. In all cases, CdSe adhered strongly to the substrate. X-ray diffraction, scanning electron microscopy, and optical transmission revealed an effect of the substrate nature upon the structural and optical properties of CdSe films. Because CdSe is an n-type semiconductor and PMeT either a p-type semiconductor or a quasi-metallic conductor, attention was focused on the hybrid organic-inorganic photovoltaic junctions, which result either from CdSe chemical bath deposition on PMeT or, conversely, from PMeT electropolymerization on CBD CdSe. In the former case, a p-n type junction was obtained, whereas, in the latter case, a Schottky-type junction was obtained. The nonoptimized photovoltaic energy conversion efficiency of these junctions under 56 mW cm<sup>-2</sup> white light from a Xenon lamp were 0.03 and 1.3%, respectively. When CdSe was deposited in the presence of silicotungstic acid (STA) in the chemical bath, localized energy levels were created in the forbidden band of CdSe, which improved the optical properties of the thin films, and hence, the energy conversion efficiency, which increased up to 2.7% for the Schottky-type photovoltaic organic-inorganic PMeT/CdSe(STA) photovoltaic junction.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0025-5408</s0></fA01><fA02 i1="01"><s0>MRBUAC</s0></fA02><fA03 i2="1"><s0>Mater. res. bull.</s0></fA03><fA05><s2>35</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Hybrid photovoltaic structures based on polymer/chemically grown cadmium selenide films : effect of silicotungstic acid on the junction properties</s1></fA08><fA11 i1="01" i2="1"><s1>SENE (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>CONG (H. Nguyen)</s1></fA11><fA11 i1="03" i2="1"><s1>DIENG (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHARTIER (P.)</s1></fA11><fA14 i1="01"><s1>Laboratoire des Semiconducteurs et d'Energie Solaire (LASES), Département de Physique, Faculté des Sciences et Techniques, Université Cheikh Anta Diop</s1><s2>Dakar-Fann</s2><s3>SEN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire d'Electrochimie et de Chimie Physique du Corps Solide, UMR ULP/CNRS 7512, Faculté de chimie, Université Louis Pasteur, 1-4 rue Biaise Pascal</s1><s2>67000 Strasbourg</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1541-1553</s1></fA20><fA21><s1>2000</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13343</s2><s5>354000093687480190</s5></fA43><fA44><s0>0000</s0><s1>© 2001 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>01-0081500</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials research bulletin</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Thin cadmium selenide layers were deposited by chemical bath deposition (CBD) on various substrates: glass, gold, indium tin oxide (ITO), and poly(3-methylthiophene) (PMeT), an organic conducting polymer. In all cases, CdSe adhered strongly to the substrate. X-ray diffraction, scanning electron microscopy, and optical transmission revealed an effect of the substrate nature upon the structural and optical properties of CdSe films. Because CdSe is an n-type semiconductor and PMeT either a p-type semiconductor or a quasi-metallic conductor, attention was focused on the hybrid organic-inorganic photovoltaic junctions, which result either from CdSe chemical bath deposition on PMeT or, conversely, from PMeT electropolymerization on CBD CdSe. In the former case, a p-n type junction was obtained, whereas, in the latter case, a Schottky-type junction was obtained. The nonoptimized photovoltaic energy conversion efficiency of these junctions under 56 mW cm<sup>-2</sup> white light from a Xenon lamp were 0.03 and 1.3%, respectively. When CdSe was deposited in the presence of silicotungstic acid (STA) in the chemical bath, localized energy levels were created in the forbidden band of CdSe, which improved the optical properties of the thin films, and hence, the energy conversion efficiency, which increased up to 2.7% for the Schottky-type photovoltaic organic-inorganic PMeT/CdSe(STA) photovoltaic junction.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Photovoltaic cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Heterojunction</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Heterounión</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Fabrication</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Manufacturing</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Fabricación</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Croissance cristalline en solution</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Crystal growth from solutions</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Mode opératoire</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Operating mode</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Método operatorio</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Difracción RX</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Substrat</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Substrate</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Substrato</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Spectre absorption</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Absorption spectrum</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Espectro de absorción</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Solar cell</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Célula solar</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Polymère conducteur</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Conducting polymers</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cadmium séléniure</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Cadmium selenides</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>CdSe</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Cd Se</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>050</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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